Coherent-electron intrinsic multistability in a double-barrier tunneling diode

Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. These solutions are characterized by different resonant states being pinned close to the conduction-band edge, with each solution having its own unique tunneling characteristics. Here we show how these multiple-branch I(v) characteristics can be engineered. This approach may open up new possibilities for high-speed functional devices.